Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
نویسندگان
چکیده
منابع مشابه
Electronic transport in dual-gated bilayer graphene at large displacement fields.
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typical...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2010
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.105.166601